Accurate MOS device hot carrier models for VLSI reliability simulation
| dc.citation.epage | 236 | en_US |
| dc.citation.spage | 233 | en_US |
| dc.contributor.author | CHUNG, SS | en_US |
| dc.contributor.author | YANG, JJ | en_US |
| dc.contributor.author | SU, JS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:45Z | |
| dc.date.available | 2014-12-08T15:27:45Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.doi | 10.1109/CICC.1995.518175 | en_US |
| dc.identifier.isbn | 0-7803-2585-0 | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE IEEE 1995 CUSTOM INTEGRATED CIRCUITS CONFERENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/CICC.1995.518175 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20003 | |
| dc.identifier.wosnumber | WOS:A1995BD31E00051 | |
| dc.language.iso | en_US | en_US |
| dc.title | Accurate MOS device hot carrier models for VLSI reliability simulation | en_US |
| dc.type | Proceedings Paper | en_US |