ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS

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dc.citation.epage1110en_US
dc.citation.spage1108en_US
dc.citation.volume64en_US
dc.citation.woscount9en_US
dc.contributor.authorYEN, STen_US
dc.contributor.authorTSAI, CMen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorLIU, DCen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T05:59:15Z
dc.date.available2019-04-02T05:59:15Z
dc.date.issued1994-02-28en_US
dc.description.abstractWe report a superlattice (SL) with multiple stacks of multiquantum barriers (MQB), which can reflect electrons more effectively than with a single stack of MQB. The reflectivities are calculated and compared with one another for a variety of potential barrier structures. The multistack SL has a wider energy spectrum within which electrons are reflected. Four types of n-GaAs/i-barrier/n-GaAs diodes were fabricated to confirm the calculated results. The current-voltage characteristics measured at 77 K for these diodes show that the turn-on voltage increases with the number of stacks of MQBs in the SL. This is in agreement with our calculated results.en_US
dc.identifier.doi10.1063/1.110843en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.110843en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/149112
dc.identifier.wosnumberWOS:A1994MZ33700018en_US
dc.language.isoen_USen_US
dc.titleENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERSen_US
dc.typeArticleen_US

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