Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)(3) (E = CH, N)
| dc.citation.epage | 369 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 365 | en_US |
| dc.citation.volume | 13 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Wu, JB | en_US |
| dc.contributor.author | Chang, PJ | en_US |
| dc.contributor.author | Chiu, HT | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:41:32Z | |
| dc.date.available | 2014-12-08T15:41:32Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | Chemical vapor deposition (CVD) of thin films employing Me3CCH=Ta(CH2CMe3)(3) and Me3CN=Ta(CH2CMe3)(3) as the precursors has been carried out. TaC and TaCN films were deposited at relatively low temperatures (623-923 K). In comparison, using Me3CN=Ta(CH2CMe3)(3), the Ta=N bond did not undergo cleavage during the reaction and the N atom was incorporated into the film as nitride. The volatile components evolved were collected and examined by GC-MS, FT-IR, H-1 and C-13 NMR spectroscopy. Possible decomposition pathways of the tantalum complexes are proposed to rationalize the observation. | en_US |
| dc.identifier.doi | 10.1039/b208129f | en_US |
| dc.identifier.issn | 0959-9428 | en_US |
| dc.identifier.journal | JOURNAL OF MATERIALS CHEMISTRY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/b208129f | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28249 | |
| dc.identifier.wosnumber | WOS:000180805300039 | |
| dc.language.iso | en_US | en_US |
| dc.title | Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)(3) (E = CH, N) | en_US |
| dc.type | Article | en_US |