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Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures

dc.citation.epage2615en_US
dc.citation.issue9en_US
dc.citation.spage2610en_US
dc.citation.volume95en_US
dc.citation.woscount17
dc.contributor.authorTseng, Ping-Chenen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorHan, Hao-Weien_US
dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:27:44Z
dc.date.available2014-12-08T15:27:44Z
dc.date.issued2011-09-01en_US
dc.description.abstractPassivation plays a critical role in silicon photovoltaics, yet how a passivation layer affects the optical characteristics of nano-patterned surfaces has rarely been discussed. In this paper, we demonstrate conical-frustum nanostructures fabricated on silicon solar cells using polystyrene colloidal lithography with various silicon-nitride (SiN(x)) passivation thicknesses. The omnidirectional and broadband antireflective characteristics were determined by utilizing angle-resolved reflectance spectroscopy. The conical-frustum arrays with a height of 550 nm and a SiN(x) thickness of 80 nm effectively suppressed the Fresnel reflection in the wavelength range from 400 to 1000 nm, up to an incidence angle of 60 degrees. As a result, the power conversion efficiency achieved was 13.39%, which showed a 9.13% enhancement compared to that of a conventional KOH-textured silicon cell. The external quantum efficiency measurements confirmed that the photocurrent was mostly contributed by the increased optical absorption in the near-infrared. The angular cell efficiencies were estimated and showed improvements over large angles of incidence. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.solmat.2011.05.010en_US
dc.identifier.issn0927-0248en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2011.05.010en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19993
dc.identifier.wosnumberWOS:000293161500010
dc.language.isoen_USen_US
dc.subjectPassivationen_US
dc.subjectNanostructureen_US
dc.subjectAngle-resolved reflectanceen_US
dc.titleAngle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructuresen_US
dc.typeArticleen_US

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