A NEW OXIDATION-RESISTANT SELF-ALIGNED TISI2 PROCESS
| dc.citation.epage | 624 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 623 | en_US |
| dc.citation.volume | 7 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | TSENG, HH | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:08Z | |
| dc.date.available | 2014-12-08T15:06:08Z | |
| dc.date.issued | 1986-11-01 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4704 | |
| dc.identifier.wosnumber | WOS:A1986E528000011 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW OXIDATION-RESISTANT SELF-ALIGNED TISI2 PROCESS | en_US |
| dc.type | Article | en_US |