Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment

Abstract

In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance. (C) 2011 Elsevier B.V. All rights reserved.