Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect
| dc.citation.epage | 435 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 431 | en_US |
| dc.citation.volume | 8 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Zheng, Zhi-Wei | en_US |
| dc.contributor.author | Hsu, Hsiao-Hsuan | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Chen, Po-Chun | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:06Z | |
| dc.date.available | 2014-12-08T15:36:06Z | |
| dc.date.issued | 2014-05-01 | en_US |
| dc.description.abstract | We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | en_US |
| dc.identifier.doi | 10.1002/pssr.201409039 | en_US |
| dc.identifier.issn | 1862-6254 | en_US |
| dc.identifier.journal | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/pssr.201409039 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24451 | |
| dc.identifier.wosnumber | WOS:000336495000012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | resistive random access memories | en_US |
| dc.subject | Y2O3 | en_US |
| dc.subject | TiOy | en_US |
| dc.subject | carrier depletion | en_US |
| dc.subject | resisitive switching | en_US |
| dc.title | Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect | en_US |
| dc.type | Article | en_US |