The fabrication of a programmable via using phase-change material in CMOS-compatible technology
| dc.citation.epage | en_US | |
| dc.citation.issue | 13 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.author | Krusin-Elbaum, Lia | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:03Z | |
| dc.date.available | 2014-12-08T15:07:03Z | |
| dc.date.issued | 2010-04-02 | en_US |
| dc.description.abstract | We demonstrate an energy-efficient programmable via concept using indirectly heated phase-change material. This via structure has maximum phase-change volume to achieve a minimum on resistance for high performance logic applications. Process development and material investigations for this device structure are reported. The device concept is successfully demonstrated in a standard CMOS-compatible technology capable of multiple cycles between on/off states for reconfigurable applications. | en_US |
| dc.identifier.doi | 10.1088/0957-4484/21/13/134001 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/21/13/134001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5528 | |
| dc.identifier.wosnumber | WOS:000275242200002 | |
| dc.language.iso | en_US | en_US |
| dc.title | The fabrication of a programmable via using phase-change material in CMOS-compatible technology | en_US |
| dc.type | Article | en_US |