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RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Method

dc.citation.epage+en_US
dc.citation.spage2110en_US
dc.citation.woscount0en_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorChen, Han-Yuen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorLiao, Wen-Shiangen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:48:55Z
dc.date.available2017-04-21T06:48:55Z
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2641-6en_US
dc.identifier.journalAPMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/135077
dc.identifier.wosnumberWOS:000274900901025en_US
dc.language.isoen_USen_US
dc.titleRF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Methoden_US
dc.typeProceedings Paperen_US

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