The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
| dc.citation.epage | 2756 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 2754 | en_US |
| dc.citation.volume | 147 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Wu, YH | en_US |
| dc.contributor.author | Huang, CH | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.author | Lin, CN | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:09Z | |
| dc.date.available | 2014-12-08T15:45:09Z | |
| dc.date.issued | 2000-07-01 | en_US |
| dc.description.abstract | We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 degrees C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0 x 10(10) cm(-2) and 3 x 10(10) eV(-1) cm(-2), respectively, from capacitance-voltage measurements. (C) 2000 The Electrochemical Society. S0013-4651(99)11-083-8. All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.1393601 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1393601 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30439 | |
| dc.identifier.wosnumber | WOS:000088125800055 | |
| dc.language.iso | en_US | en_US |
| dc.title | The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding | en_US |
| dc.type | Article | en_US |