Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions
| dc.citation.epage | 683 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 681 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chen, W. B. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:23Z | |
| dc.date.available | 2014-12-08T15:09:23Z | |
| dc.date.issued | 2009-06-01 | en_US |
| dc.description.abstract | We demonstrate a low threshold voltage (V,) of -0.17 V and good hole mobility (54 cm(2)/V (.) s at 0.8 MV/cm) in TaN/Ir/LaTiO p-MOSFETs at an equivalent oxide thickness of only 0.66 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO(2)-covered Ni/Ga which reduced the high-kappa dielectric interfacial reactions. This approach, along with its self-aligned and gate-first process, is compatible with current VLSI technology. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2020307 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2020307 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7162 | |
| dc.identifier.wosnumber | WOS:000266409200032 | |
| dc.language.iso | en_US | en_US |
| dc.subject | LaTiO | en_US |
| dc.subject | low V(t) | en_US |
| dc.subject | solid-phase diffusion (SPD) | en_US |
| dc.title | Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions | en_US |
| dc.type | Article | en_US |