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Low refractive index Si nanopillars on Si substrate

dc.citation.epageen_US
dc.citation.issue18en_US
dc.citation.volume90en_US
dc.citation.woscount31
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorChang, Ya-Chungen_US
dc.contributor.authorLiu, En-Shaoen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Huang-Shenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:14:12Z
dc.date.available2014-12-08T15:14:12Z
dc.date.issued2007-04-30en_US
dc.description.abstractLow refractive index of a stalagmitelike high-aspect-ratio Si nanopillar array on Si dry etched using a self-aggregated Ni nanodot mask is demonstrated, which exhibits two minimum reflectances of 1.23 and 1.4 with corresponding refractive indices of 1.25 and 1.48 at 400 and 1200 nm, respectively. Angular dependency of the transverse electrical mode reflectance at 632.8 nm of the surface roughened Si nanopillar array is released, and the Brewster angle of 63 degrees with equivalent refractive index of 1.5 is determined. (C) 2007 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2736281en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2736281en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10880
dc.identifier.wosnumberWOS:000246210000054
dc.language.isoen_USen_US
dc.titleLow refractive index Si nanopillars on Si substrateen_US
dc.typeArticleen_US

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