Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

dc.citation.epage	636	en_US
dc.citation.spage	633	en_US
dc.citation.volume	15	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Lin, Chun-Yu	en_US
dc.contributor.author	Chang, Pin-Hsin	en_US
dc.contributor.author	Chang, Rong-Kun	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2016-03-28T00:04:20Z
dc.date.available	2016-03-28T00:04:20Z
dc.date.issued	2015-12-01	en_US
dc.description.abstract	The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.	en_US
dc.identifier.doi	10.1109/TDMR.2015.2496364	en_US
dc.identifier.issn	1530-4388	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TDMR.2015.2496364	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/129563
dc.identifier.wosnumber	WOS:000366662500024	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrostatic discharge (ESD)	en_US
dc.subject	layout	en_US
dc.subject	MOSFET	en_US
dc.subject	pickup	en_US
dc.title	Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process	en_US
dc.type	Letter	en_US

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