Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
| dc.citation.epage | 344 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 342 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 16 | |
| dc.contributor.author | Syu, Yong-En | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Tsai, Tsung-Ming | en_US |
| dc.contributor.author | Chang, Geng-Wei | en_US |
| dc.contributor.author | Chang, Kuan-Chang | en_US |
| dc.contributor.author | Lou, Jyun-Hao | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Wang, Ying-Lang | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:54Z | |
| dc.date.available | 2014-12-08T15:21:54Z | |
| dc.date.issued | 2012-03-01 | en_US |
| dc.description.abstract | Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator. | en_US |
| dc.identifier.doi | 10.1109/LED.2011.2182600 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2182600 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15593 | |
| dc.identifier.wosnumber | WOS:000300580000014 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Nonvolatile memory | en_US |
| dc.subject | resistance switching | en_US |
| dc.subject | tip electric field | en_US |
| dc.subject | tungsten silicide (WSi) | en_US |
| dc.title | Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device | en_US |
| dc.type | Article | en_US |