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金屬閘極金氧半場效電晶體關鍵技術(I)
金屬閘極金氧半場效電晶體關鍵技術(I)
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Date
2001
Authors
崔秉鉞
Bing-YueTsui
Journal Title
Journal ISSN
Volume Title
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DOI
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Description
Keywords
金屬閘極
,
金氧半導體場效電晶體
,
關鍵技術
,
Metal gate
,
MOSFET
,
Key technology
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=665689&docId=126370
https://ir.lib.nycu.edu.tw/handle/11536/93429
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