金屬閘極金氧半場效電晶體關鍵技術(I)

dc.contributor.author	崔秉鉞	en_US
dc.contributor.author	Bing-YueTsui	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
dc.date.accessioned	2014-12-13T10:35:25Z
dc.date.available	2014-12-13T10:35:25Z
dc.date.issued	2001	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC90-2215-E009-064	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665689&docId=126370	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/93429
dc.language.iso	zh_TW	en_US
dc.subject	金屬閘極	zh_TW
dc.subject	金氧半導體場效電晶體	zh_TW
dc.subject	關鍵技術	zh_TW
dc.subject	Metal gate	en_US
dc.subject	MOSFET	en_US
dc.subject	Key technology	en_US
dc.title	金屬閘極金氧半場效電晶體關鍵技術(I)	zh_TW
dc.title	Key Technologies of Metal Gate MOSFET (I)	en_US
dc.type	Plan	en_US

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