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REDISTRIBUTION OF DEPOSITED BORON IN SILICON DURING DRY O2 AND TCE O2 OXIDATIONS

dc.citation.epageC93en_US
dc.citation.issue3en_US
dc.citation.spageC93en_US
dc.citation.volume127en_US
dc.citation.woscount0
dc.contributor.authorGUO, SFen_US
dc.contributor.authorCHU, TYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:06:30Z
dc.date.available2014-12-08T15:06:30Z
dc.date.issued1980en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5076
dc.identifier.wosnumberWOS:A1980JJ15600194
dc.language.isoen_USen_US
dc.titleREDISTRIBUTION OF DEPOSITED BORON IN SILICON DURING DRY O2 AND TCE O2 OXIDATIONSen_US
dc.typeMeeting Abstracten_US

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