An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W, P) Layer to Lead-Free SnBi Solder
| dc.citation.epage | 339 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 330 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Pan, Hung-Chun | en_US |
| dc.contributor.author | Hsieh, Tsung-Eong | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:03Z | |
| dc.date.available | 2014-12-08T15:12:03Z | |
| dc.date.issued | 2011-03-01 | en_US |
| dc.description.abstract | Diffusion barrier characteristics for eutectic SnBi solder/electroless Co(W,P) couples were investigated via liquid-state aging at 250 degrees C and solid-state aging at 120 degrees C. At the couple interface, CoSn(3) intermetallic compound (IMC) spallation was observed for the SnBi/amorphous Co(W,P) couple subjected to liquid-state aging. In contrast, no spallation of IMCs was observed for the SnBi/amorphous Co(W,P) couples subjected to solid-state aging. For the SnBi/polycrystalline Co(W,P) couple, a thick IMC layer was observed adjacent to a tungsten-enriched amorphous interfacial layer regardless of aging conditions. IMC formation in all samples indicated that Co(W,P) is essentially a sacrificial barrier to SnBi solder. However, amorphous Co(W,P) might also exhibit stuffed-type barrier behavior due to its relatively high phosphorus (P) content. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the SnBi/electroless Co(W,P) interface. | en_US |
| dc.identifier.doi | 10.1007/s11664-010-1488-6 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-010-1488-6 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9236 | |
| dc.identifier.wosnumber | WOS:000287863200013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Diffusion barrier | en_US |
| dc.subject | electroless Co(W,P) | en_US |
| dc.subject | lead-free SnBi solder | en_US |
| dc.subject | intermetallic compounds | en_US |
| dc.title | An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W, P) Layer to Lead-Free SnBi Solder | en_US |
| dc.type | Article | en_US |