Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
| dc.citation.epage | 1848 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1844 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 66 | |
| dc.contributor.author | Huang, HW | en_US |
| dc.contributor.author | Chu, JT | en_US |
| dc.contributor.author | Kao, CC | en_US |
| dc.contributor.author | Hseuh, TH | en_US |
| dc.contributor.author | Lu, TC | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.author | Yu, CC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:32Z | |
| dc.date.available | 2014-12-08T15:18:32Z | |
| dc.date.issued | 2005-09-01 | en_US |
| dc.description.abstract | This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. | en_US |
| dc.identifier.doi | 10.1088/0957-4484/16/9/071 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/16/9/071 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13342 | |
| dc.identifier.wosnumber | WOS:000232089500071 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface | en_US |
| dc.type | Article | en_US |