Hot-carrier effects on power characteristics of SiGeHBTs
| dc.citation.epage | 395 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 393 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Huang, SY | en_US |
| dc.contributor.author | Chen, KM | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Tseng, HC | en_US |
| dc.contributor.author | Hsu, TL | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:08Z | |
| dc.date.available | 2014-12-08T15:39:08Z | |
| dc.date.issued | 2004-06-01 | en_US |
| dc.description.abstract | This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations. | en_US |
| dc.identifier.doi | 10.1109/LED.2004.828589 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2004.828589 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26747 | |
| dc.identifier.wosnumber | WOS:000221659700017 | |
| dc.language.iso | en_US | en_US |
| dc.subject | hot-carrier (HC) stress | en_US |
| dc.subject | linearity | en_US |
| dc.subject | load-pull measurement | en_US |
| dc.subject | power | en_US |
| dc.subject | SiGeHBT | en_US |
| dc.title | Hot-carrier effects on power characteristics of SiGeHBTs | en_US |
| dc.type | Article | en_US |