Polymer hot-carrier transistor
| dc.citation.epage | en_US | |
| dc.citation.issue | 25 | en_US |
| dc.citation.volume | 87 | en_US |
| dc.citation.woscount | 24 | |
| dc.contributor.author | Chao, YC | en_US |
| dc.contributor.author | Yang, SL | en_US |
| dc.contributor.author | Meng, HF | en_US |
| dc.contributor.author | Horng, SF | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2014-12-08T15:17:52Z | |
| dc.date.available | 2014-12-08T15:17:52Z | |
| dc.date.issued | 2005-12-19 | en_US |
| dc.description.abstract | Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V. | en_US |
| dc.identifier.doi | 10.1063/1.2149219 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2149219 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12957 | |
| dc.identifier.wosnumber | WOS:000234118900100 | |
| dc.language.iso | en_US | en_US |
| dc.title | Polymer hot-carrier transistor | en_US |
| dc.type | Article | en_US |