Low power consumption resistance random access memory with Pt/InOx/TiN structure
| dc.citation.epage | en_US | |
| dc.citation.issue | 10 | en_US |
| dc.citation.volume | 103 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Yang, Jyun-Bao | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Huang, Jheng-Jie | en_US |
| dc.contributor.author | Chen, Yu-Ting | en_US |
| dc.contributor.author | Tseng, Hsueh-Chih | en_US |
| dc.contributor.author | Chu, Ann-Kuo | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:33:04Z | |
| dc.date.available | 2014-12-08T15:33:04Z | |
| dc.date.issued | 2013-09-02 | en_US |
| dc.description.abstract | In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption. (C) 2013 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4818672 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4818672 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23026 | |
| dc.identifier.wosnumber | WOS:000324389700045 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low power consumption resistance random access memory with Pt/InOx/TiN structure | en_US |
| dc.type | Article | en_US |