Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
| dc.citation.issue | 12 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Ahn, Hyeyoung | en_US |
| dc.contributor.author | Yeh, Yi-Jou | en_US |
| dc.contributor.author | Hong, Yu-Liang | en_US |
| dc.contributor.author | Gwo, Shangjr | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:46Z | |
| dc.date.available | 2014-12-08T15:07:46Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | We report terahertz (THz) generation from Mg-doped nonpolar (a-plane) InN (a-InN:Mg). While the amplitude and polarity of the THz field from Mg-doped polar (c-plane) InN depend on the background carrier density, the p-polarized THz field from a-InN: Mg has background carrier-insensitive intensity and polarity, which can be attributed to carrier transport in a polarization-induced in-plane electric field. A small but apparent azimuthal angle dependence of the THz field from a-InN:Mg shows the additional contribution of the second-order nonlinear optical effect. Meanwhile, in this study, we did not observe the contribution of the intrinsic in-plane electric field which is significant for high stacking fault density nonpolar InN. (C) 2010 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/APEX.3.122105 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/APEX.3.122105 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6115 | |
| dc.identifier.wosnumber | WOS:000285181600013 | |
| dc.language.iso | en_US | en_US |
| dc.title | Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films | en_US |
| dc.type | Article | en_US |