Thermomigration in flip-chip SnPb solder joints under alternating current stressing
| dc.citation.epage | en_US | |
| dc.citation.issue | 15 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 31 | |
| dc.contributor.author | Hsiao, Hsiang-Yao | en_US |
| dc.contributor.author | Chen, Chih | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:14:17Z | |
| dc.date.available | 2014-12-08T15:14:17Z | |
| dc.date.issued | 2007-04-09 | en_US |
| dc.description.abstract | Thermomigration in flip-chip solder joints is investigated using alternating currents and infrared microscopy to decouple it from electromigration effect. It is found that the thermal gradient in solder bump can be as high as 2143 degrees C/cm when 9.2x10(4) A/cm(2) was applied at 100 degrees C. Markers fabricated by focus ion beam are employed to measure the thermomigration rate. The thermomigration flux is measured to be 3.3x10(13) at./cm(2). With the known thermal gradient, the molar heat of 26.8 kJ/mole has been obtained for the transport of Pb. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2721136 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2721136 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10920 | |
| dc.identifier.wosnumber | WOS:000245690700055 | |
| dc.language.iso | en_US | en_US |
| dc.title | Thermomigration in flip-chip SnPb solder joints under alternating current stressing | en_US |
| dc.type | Article | en_US |