Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
| dc.citation.epage | 860 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 858 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Tseng, Hsueh-Chih | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Wu, Yi-Chun | en_US |
| dc.contributor.author | Wu, Sei-Wei | en_US |
| dc.contributor.author | Huang, Jheng-Jie | en_US |
| dc.contributor.author | Chen, Yu-Ting | en_US |
| dc.contributor.author | Yang, Jyun-Bao | en_US |
| dc.contributor.author | Lin, Tzu-Ping | en_US |
| dc.contributor.author | Sze, Simon. M. | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Wang, Ying-Lang | en_US |
| dc.contributor.author | Chu, Ann-Kuo | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:05Z | |
| dc.date.available | 2014-12-08T15:32:05Z | |
| dc.date.issued | 2013-07-01 | en_US |
| dc.description.abstract | This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2259135 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2259135 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22601 | |
| dc.identifier.wosnumber | WOS:000323685700012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Indium tin oxide (ITO) | en_US |
| dc.subject | resistance switching | en_US |
| dc.subject | resistive random access memory (ReRAM) | en_US |
| dc.subject | self-built current compliance | en_US |
| dc.title | Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure | en_US |
| dc.type | Article | en_US |