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HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY

dc.citation.epage3628en_US
dc.citation.issue26en_US
dc.citation.spage3626en_US
dc.citation.volume64en_US
dc.citation.woscount3
dc.contributor.authorCHENG, TMen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorCHANG, TCen_US
dc.contributor.authorHUANG, JHen_US
dc.contributor.authorHUANG, MFen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:03:55Z
dc.date.available2014-12-08T15:03:55Z
dc.date.issued1994-06-27en_US
dc.description.abstractHigh-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.en_US
dc.identifier.doi10.1063/1.111225en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.111225en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2448
dc.identifier.wosnumberWOS:A1994NU15500035
dc.language.isoen_USen_US
dc.titleHIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXYen_US
dc.typeArticleen_US

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