Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
| dc.citation.epage | 2725 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 2720 | en_US |
| dc.citation.volume | 56 | en_US |
| dc.citation.woscount | 14 | |
| dc.contributor.author | Wu, Yu-Sheng | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:20Z | |
| dc.date.available | 2014-12-08T15:08:20Z | |
| dc.date.issued | 2009-11-01 | en_US |
| dc.description.abstract | This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design. | en_US |
| dc.identifier.doi | 10.1109/TED.2009.2030714 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2009.2030714 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6471 | |
| dc.identifier.wosnumber | WOS:000271019500044 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Gate-all-around (GAA) | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | quantum effects | en_US |
| dc.subject | short-channel effect | en_US |
| dc.title | Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region | en_US |
| dc.type | Article | en_US |