NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETS
| dc.citation.epage | 249 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 242 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | LO, SH | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:05:01Z | |
| dc.date.available | 2014-12-08T15:05:01Z | |
| dc.date.issued | 1992-02-01 | en_US |
| dc.description.abstract | The looping effect in the I(D)-V(D) characteristics of GaAs MESFET's on semi-insulating substrates has been studied using a two-dimensional numerical analysis. Both the transient and the steady-state behaviors of the looping phenomenon are simulated and discussed. Peak voltage- and frequency-dependent behaviors of the looping effect are analyzed. The I(D)-V(D) loop is due to the difference in the distribution of ionized EL2 concentration when the drain voltage rises and falls because of the trapping process of EL2's. The output conductance is also found to be frequency-dependent and is explained by the frequency-dependent modulation of the potential barrier height at the channel/substrate interface due to the drain-voltage variation. | en_US |
| dc.identifier.doi | 10.1109/16.121679 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.121679 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3532 | |
| dc.identifier.wosnumber | WOS:A1992GZ71400004 | |
| dc.language.iso | en_US | en_US |
| dc.title | NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETS | en_US |
| dc.type | Article | en_US |