Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 51 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Fatah, Faiz | en_US |
| dc.contributor.author | Kuo, Chien-I | en_US |
| dc.contributor.author | Hsu, Heng-Tung | en_US |
| dc.contributor.author | Chiang, Che-Yang | en_US |
| dc.contributor.author | Hsu, Ching-Yi | en_US |
| dc.contributor.author | Miyamoto, Yasuyuki | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:28:33Z | |
| dc.date.available | 2014-12-08T15:28:33Z | |
| dc.date.issued | 2012-11-01 | en_US |
| dc.description.abstract | In this paper, we present the fabrication and characterization of 40 nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (f(T)) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization. (C) 2012 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.51.110203 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.51.110203 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20646 | |
| dc.identifier.wosnumber | WOS:000310709500003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz | en_US |
| dc.type | Article | en_US |