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CHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT)

dc.citation.epage80en_US
dc.citation.issue3en_US
dc.citation.spage73en_US
dc.citation.volume128en_US
dc.citation.woscount2
dc.contributor.authorWU, CYen_US
dc.contributor.authorWU, CYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:26Z
dc.date.available2014-12-08T15:06:26Z
dc.date.issued1981en_US
dc.identifier.issn0956-3776en_US
dc.identifier.journalIEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISIONen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5008
dc.identifier.wosnumberWOS:A1981LV51900001
dc.language.isoen_USen_US
dc.titleCHARACTERIZATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR-TRANSISTOR (LBT)en_US
dc.typeArticleen_US

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