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薄絕緣層複晶矽及相關元件之研究(V)

dc.contributor.author李崇仁en_US
dc.contributor.department國立交通大學電子工程研究所zh_TW
dc.date.accessioned2014-12-13T10:40:22Z
dc.date.available2014-12-13T10:40:22Z
dc.date.issued1994en_US
dc.description.abstract本計畫係一長期計畫&quot;薄絕緣層□複晶矽及 相關元件之研究(□)□(□)□(□) &quot;(□)之延續 計畫.全程計畫之目標,為對薄絕緣層如SiO2, SiNxOy及複晶矽薄膜等,其應用於元件上之一些 製備方式□物理性質□元件應用□測量方法等 作一研究.zh_TW
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC83-0404-E009-017zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=120636&docId=20114en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/97412
dc.language.isozh_TWen_US
dc.subject薄絕緣層zh_TW
dc.subject複晶矽zh_TW
dc.subject橢圓儀zh_TW
dc.subjectThin dielectricen_US
dc.subjectPolysiliconen_US
dc.subjectEllipsometryen_US
dc.title薄絕緣層複晶矽及相關元件之研究(V)zh_TW
dc.titleStudy on Thin Dielectrics, Poly Silicon and Related Devices(V)en_US
dc.typePlanen_US

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