A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding

Abstract

Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 mu m to 40 mu m. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 mu m Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.