Bipolar conductivity in amorphous HfO2

dc.citation.volume	99	en_US
dc.citation.woscount	10	en_US
dc.contributor.author	Islamov, D. R.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, A.	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2019-04-02T05:58:57Z
dc.date.available	2019-04-02T05:58:57Z
dc.date.issued	2011-08-15	en_US
dc.description.abstract	This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]	en_US
dc.identifier.doi	10.1063/1.3626599	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3626599	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/150355
dc.identifier.wosnumber	WOS:000294208900026	en_US
dc.language.iso	en_US	en_US
dc.title	Bipolar conductivity in amorphous HfO2	en_US
dc.type	Article	en_US

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