Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
| dc.citation.epage | en_US | |
| dc.citation.issue | 13 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 17 | |
| dc.contributor.author | Teng, Li-Feng | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Lo, Yuan-Jou | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.department | 光電學院 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | College of Photonics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:28:19Z | |
| dc.date.available | 2014-12-08T15:28:19Z | |
| dc.date.issued | 2012-09-24 | en_US |
| dc.description.abstract | By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm(2)/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 degrees C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754627] | en_US |
| dc.identifier.doi | 10.1063/1.4754627 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4754627 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20476 | |
| dc.identifier.wosnumber | WOS:000309426800059 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor | en_US |
| dc.type | Article | en_US |