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Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane

dc.citation.epageen_US
dc.citation.issue7en_US
dc.citation.volume90en_US
dc.citation.woscount16
dc.contributor.authorHsieh, Tung-Poen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.contributor.authorChang, Hsiang-Szuen_US
dc.contributor.authorChen, Wen-Yenen_US
dc.contributor.authorHsu, Tzu Minen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:14:42Z
dc.date.available2014-12-08T15:14:42Z
dc.date.issued2007-02-12en_US
dc.description.abstractThis work demonstrates single photon emissions from a site-controlled quantum dot (QD) grown on a self-constructed nanoplane. The size of the nanoplane on the micron-sized multifacet structure is accurately controlled by a low surface reducing rate (similar to 16 nm/min). Single QD spectral lines were resolved and identified. The antibunching behavior reveals that single photons are emitted from the positioned QD. (c) 2007 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2644093en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2644093en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11132
dc.identifier.wosnumberWOS:000244249800063
dc.language.isoen_USen_US
dc.titleSingle photon emission from an InGaAs quantum dot precisely positioned on a nanoplaneen_US
dc.typeArticleen_US

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