SiGe nanorings by ultrahigh vacuum chemical vapor deposition
| dc.citation.epage | en_US | |
| dc.citation.issue | 14 | en_US |
| dc.citation.volume | 94 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Lee, C. -H. | en_US |
| dc.contributor.author | Shen, Y. -Y. | en_US |
| dc.contributor.author | Liu, C. W. | en_US |
| dc.contributor.author | Lee, S. W. | en_US |
| dc.contributor.author | Lin, B. -H. | en_US |
| dc.contributor.author | Hsu, C. -H. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:38Z | |
| dc.date.available | 2014-12-08T15:09:38Z | |
| dc.date.issued | 2009-04-06 | en_US |
| dc.description.abstract | Formation of SiGe nanorings from Si capped Si(0.1)Ge(0.9) quantum dots (QDs) grown at 500 degrees C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation. | en_US |
| dc.identifier.doi | 10.1063/1.3116619 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3116619 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7374 | |
| dc.identifier.wosnumber | WOS:000265083700022 | |
| dc.language.iso | en_US | en_US |
| dc.subject | annealing | en_US |
| dc.subject | chemical vapour deposition | en_US |
| dc.subject | diffusion | en_US |
| dc.subject | Ge-Si alloys | en_US |
| dc.subject | nanofabrication | en_US |
| dc.subject | Raman spectra | en_US |
| dc.subject | semiconductor growth | en_US |
| dc.subject | semiconductor materials | en_US |
| dc.subject | semiconductor quantum dots | en_US |
| dc.subject | silicon | en_US |
| dc.subject | X-ray diffraction | en_US |
| dc.title | SiGe nanorings by ultrahigh vacuum chemical vapor deposition | en_US |
| dc.type | Article | en_US |