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Microwave penetration depth measurement for high T-c superconductors by dielectric resonators

dc.citation.epage439en_US
dc.citation.issue3en_US
dc.citation.spage433en_US
dc.citation.volume51en_US
dc.citation.woscount9
dc.contributor.authorLue, HTen_US
dc.contributor.authorLue, JTen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:42:22Z
dc.date.available2014-12-08T15:42:22Z
dc.date.issued2002-06-01en_US
dc.description.abstractThe penetration depth A(T) dependence on temperatures for high T. superconducting YBa2Cu3O7-delta thin films stored in various environments was measured by a well-designed microwave dielectric resonator. A d-wave T-2 dependence was observed at low temperatures, while an exponential dependence of the penetration depth lambda(T) relevant to the s wave was detected as temperature increases due to thermal fluctuation. An abnormal upturn of the penetration depth at temperatures below 10 K attributed to the surface current carried by the defect surface-induced Andreev bound states can be apparently observed without applying heavy-ion bombardment from this relatively higher frequency measurement. Readers who endeavor to start this kind of measurement can use the well-modified dielectric cavity in conjunction with the detailed measuring procedure.en_US
dc.identifier.doi10.1109/TIM.2002.1017712en_US
dc.identifier.issn0018-9456en_US
dc.identifier.journalIEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENTen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TIM.2002.1017712en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28769
dc.identifier.wosnumberWOS:000176796100006
dc.language.isoen_USen_US
dc.titleMicrowave penetration depth measurement for high T-c superconductors by dielectric resonatorsen_US
dc.typeArticleen_US

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