Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution
| dc.citation.epage | 507 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 505 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Chou, K. I. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Zheng, Z. W. | en_US |
| dc.contributor.author | Liu, Ming | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:22Z | |
| dc.date.available | 2014-12-08T15:30:22Z | |
| dc.date.issued | 2013-04-01 | en_US |
| dc.description.abstract | Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2243814 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2243814 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21713 | |
| dc.identifier.wosnumber | WOS:000316813100010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Flexible electronics | en_US |
| dc.subject | GeOx | en_US |
| dc.subject | resistive random access memory (RRAM) | en_US |
| dc.subject | TiOy | en_US |
| dc.title | Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution | en_US |
| dc.type | Article | en_US |