Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
| dc.citation.epage | G23 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | G18 | en_US |
| dc.citation.volume | 154 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chen, Jian Hao | en_US |
| dc.contributor.author | Huang, Tzung Bin | en_US |
| dc.contributor.author | Wu, Xiaohua | en_US |
| dc.contributor.author | Landheer, Dolf | en_US |
| dc.contributor.author | Lei, Tan Fu | en_US |
| dc.contributor.author | Chao, Tien Sheng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:03Z | |
| dc.date.available | 2014-12-08T15:15:03Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.2388733 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2388733 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11327 | |
| dc.identifier.wosnumber | WOS:000242538600058 | |
| dc.language.iso | en_US | en_US |
| dc.title | Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation | en_US |
| dc.type | Article | en_US |