Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
| dc.citation.epage | 164 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 162 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Wu, Yu-Sheng | en_US |
| dc.contributor.author | Fan, Ming-Long | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:33Z | |
| dc.date.available | 2014-12-08T15:07:33Z | |
| dc.date.issued | 2010-02-01 | en_US |
| dc.description.abstract | This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2037247 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2037247 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5940 | |
| dc.identifier.wosnumber | WOS:000274018000024 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Line edge roughness (LER) | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | random dopant fluctuation (RDF) | en_US |
| dc.subject | switching time (ST) | en_US |
| dc.title | Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach | en_US |
| dc.type | Article | en_US |