Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes
| dc.citation.epage | L1190 | en_US |
| dc.citation.issue | 45-49 | en_US |
| dc.citation.spage | L1188 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Hu, Chen-Ming | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:13:01Z | |
| dc.date.available | 2014-12-08T15:13:01Z | |
| dc.date.issued | 2007-12-01 | en_US |
| dc.description.abstract | Ni-metal-induced lateral crystallization (NILC) of amorphous Si (alpha-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, alpha-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask. | en_US |
| dc.identifier.doi | 10.1143/JJAP.46.L1188 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.L1188 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10047 | |
| dc.identifier.wosnumber | WOS:000252043500035 | |
| dc.language.iso | en_US | en_US |
| dc.subject | nickel gettering | en_US |
| dc.subject | NILC | en_US |
| dc.subject | polycrystalline silicon | en_US |
| dc.title | Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes | en_US |
| dc.type | Article | en_US |