Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities
| dc.citation.epage | 165 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 163 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Liao, C. C. | en_US |
| dc.contributor.author | Ku, T. C. | en_US |
| dc.contributor.author | Lin, M. H. | en_US |
| dc.contributor.author | Zeng, Lang | en_US |
| dc.contributor.author | Kang, Jinfeng | en_US |
| dc.contributor.author | Liu, Xiaoyan | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:10Z | |
| dc.date.available | 2014-12-08T15:29:10Z | |
| dc.date.issued | 2013-02-01 | en_US |
| dc.description.abstract | High-performance TaN/TiLaO/La2O3/SiO2/(111)-Ge nMOSFETs show high mobility of 432 cm(2)/V . s at 10(13) cm(-2) carrier density (N-s), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high N-s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact. | en_US |
| dc.identifier.doi | 10.1109/LED.2012.2230241 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2012.2230241 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21019 | |
| dc.identifier.wosnumber | WOS:000314173200005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Ge | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | laser | en_US |
| dc.subject | YbGe | en_US |
| dc.subject | (111) | en_US |
| dc.title | Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities | en_US |
| dc.type | Article | en_US |