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One-shot exposure for patterning two-dimensional photonic crystals to enhance light extraction of InGaN-based green LEDs

dc.citation.epage143en_US
dc.citation.issue1-4en_US
dc.citation.spage141en_US
dc.citation.volume20en_US
dc.citation.woscount18
dc.contributor.authorHsieh, Mei-Lien_US
dc.contributor.authorLo, Kuo-Changen_US
dc.contributor.authorLan, Yi-Shengen_US
dc.contributor.authorYang, S. Y.en_US
dc.contributor.authorLin, C. H.en_US
dc.contributor.authorLiu, H. M.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:49Z
dc.date.available2014-12-08T15:12:49Z
dc.date.issued2008-01-01en_US
dc.description.abstractTo promote the feasibility of using photonic crystals to enhance light extraction of light-emitting diodes (LEDs) for industrial applications, the request for the high-yield and simple exposure process to pattern two-dimensional photonic crystals (2DPCs) becomes rather urgent. In this work, we developed a one-shot three-beam laser interference system-to fabricate a 2DPC on an InGaN-based green LED to address its performance for backlight display applications. Using the current exposure system we develop here, a submicro-patterned area of 6 mm in diameter can be achieved. The experimental results show that the operating voltage of a 1 x 1 mm(2) in-area LED incorporated with the 2DPC is around 4 V, and the light extraction efficiency is enhanced by a factor of 2.1.en_US
dc.identifier.doi10.1109/LPT.2007.912510en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2007.912510en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9876
dc.identifier.wosnumberWOS:000253225300046
dc.language.isoen_USen_US
dc.subjectholographyen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectphotonic crystalen_US
dc.titleOne-shot exposure for patterning two-dimensional photonic crystals to enhance light extraction of InGaN-based green LEDsen_US
dc.typeArticleen_US

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