The characteristics of polysilicon oxide grown on amorphous silicon deposited from disilane

Abstract

The characteristics of polysilicon oxide (polyoxide) grown on amorphous silicon deposited from disilane as the silicon source are reported on. The rate of amorphous silicon deposition from disilane is comparable to that of polysilicon deposition from silane. Moreover, the obtained polyoxide has the desirable electrical characteristics of lower leakage current and higher breakdown held than those of polyoxide grown on polysilicon deposition from silane, urgently needed for nonvolatile memory application. At the same time! the grown polysilicon oxides have lower electron trapping rates and larger charge-to-breakdown (Q(bd)), both attributable to their smoother polyoxide/polysilicon-1 interface than those of polyoxides grown on polysilicon deposition from silane.