Stability and etching of titanium oxynitride films in hydrogen microwave plasma
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Do, Hien | en_US |
| dc.contributor.author | Yen, Tzu-Chun | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:31:14Z | |
| dc.date.available | 2014-12-08T15:31:14Z | |
| dc.date.issued | 2013-07-01 | en_US |
| dc.description.abstract | Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented. (C) 2013 American Vacuum Society. | en_US |
| dc.identifier.doi | 10.1116/1.4811676 | en_US |
| dc.identifier.issn | 0734-2101 | en_US |
| dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1116/1.4811676 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22240 | |
| dc.identifier.wosnumber | WOS:000321516400007 | |
| dc.language.iso | en_US | en_US |
| dc.title | Stability and etching of titanium oxynitride films in hydrogen microwave plasma | en_US |
| dc.type | Article | en_US |