Enhanced performance and reliability of NILC-TFTs using FSG buffer layer
| dc.citation.epage | 640 | en_US |
| dc.citation.issue | 2-3 | en_US |
| dc.citation.spage | 637 | en_US |
| dc.citation.volume | 132 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chen, Chien-Chih | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:22:00Z | |
| dc.date.available | 2014-12-08T15:22:00Z | |
| dc.date.issued | 2012-02-15 | en_US |
| dc.description.abstract | A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.matchemphys.2011.11.080 | en_US |
| dc.identifier.issn | 0254-0584 | en_US |
| dc.identifier.journal | MATERIALS CHEMISTRY AND PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.matchemphys.2011.11.080 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15629 | |
| dc.identifier.wosnumber | WOS:000301083800061 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Fluorinated-silicate-glass (FSG) | en_US |
| dc.subject | Polycrystalline silicon thin-film transistors | en_US |
| dc.subject | (poly-Si TFTs) | en_US |
| dc.subject | Ni-metal-induced lateral crystallization | en_US |
| dc.subject | (NILC) | en_US |
| dc.title | Enhanced performance and reliability of NILC-TFTs using FSG buffer layer | en_US |
| dc.type | Article | en_US |