Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
| dc.citation.epage | 956 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 952 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Liang, MW | en_US |
| dc.contributor.author | Hsieh, TE | en_US |
| dc.contributor.author | Chang, SY | en_US |
| dc.contributor.author | Chuang, TH | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:40:21Z | |
| dc.date.available | 2014-12-08T15:40:21Z | |
| dc.date.issued | 2003-09-01 | en_US |
| dc.description.abstract | The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250degreesC and 400degreesC by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) eta-(Cu0.99Au0.01)(6)Sn(5/)delta-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)(6)Sn-5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm(2) could be attained under the bonding condition of 300degreesC for 20 min. | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27556 | |
| dc.identifier.wosnumber | WOS:000185212800007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | diffusion soldering | en_US |
| dc.subject | die attachment | en_US |
| dc.subject | intermetallic compounds | en_US |
| dc.subject | kinetics analysis | en_US |
| dc.subject | bonding strength | en_US |
| dc.title | Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers | en_US |
| dc.type | Article | en_US |