<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory

dc.citation.epage+en_US
dc.citation.spage135en_US
dc.citation.woscount1en_US
dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorChen, Ying-Chenen_US
dc.contributor.authorLi, Jien_US
dc.contributor.authorXue, Feien_US
dc.contributor.authorWang, Yanzhenen_US
dc.contributor.authorZhou, Feien_US
dc.contributor.authorFowler, Burten_US
dc.contributor.authorLee, Jack C.en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:48:34Z
dc.date.available2017-04-21T06:48:34Z
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0811-0en_US
dc.identifier.isbn978-1-4799-0812-7en_US
dc.identifier.issn1548-3770en_US
dc.identifier.journal2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134738
dc.identifier.wosnumberWOS:000347466000073en_US
dc.language.isoen_USen_US
dc.titleComprehensive Trap-Level Study in SiOx-based Resistive Switching Memoryen_US
dc.typeProceedings Paperen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: