A one-step single-cleaning solution for CMOS processes
| dc.citation.epage | G507 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | G503 | en_US |
| dc.citation.volume | 150 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Yeh, CH | en_US |
| dc.contributor.author | Pan, TM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Li, YH | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:24Z | |
| dc.date.available | 2014-12-08T15:40:24Z | |
| dc.date.issued | 2003-09-01 | en_US |
| dc.description.abstract | In this paper, we demonstrate a one-step single-cleaning solution to replace the conventional RCA two-step cleaning method for complementary metal oxide semiconductor (CMOS) processes. We found the performance of devices fabricated using this new recipe is comparable or even better than that of devices fabricated using the conventional RCA method. The benefits of this method are more efficient removal of contaminants, improved driving current of devices, simpler processing, fewer steps in cleaning, time savings, reduction of cost and of chemical waste, and reduced impact on the environment. (C) 2003 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.1593048 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1593048 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27581 | |
| dc.identifier.wosnumber | WOS:000184673100052 | |
| dc.language.iso | en_US | en_US |
| dc.title | A one-step single-cleaning solution for CMOS processes | en_US |
| dc.type | Article | en_US |