Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
| dc.citation.epage | en_US | |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 96 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lin, Zer-Ming | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Chen, Wei-Chen | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:24Z | |
| dc.date.available | 2014-12-08T15:07:24Z | |
| dc.date.issued | 2010-02-15 | en_US |
| dc.description.abstract | In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3-2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7-12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement. | en_US |
| dc.identifier.doi | 10.1063/1.3327336 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3327336 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5839 | |
| dc.identifier.wosnumber | WOS:000274758100040 | |
| dc.language.iso | en_US | en_US |
| dc.subject | elemental semiconductors | en_US |
| dc.subject | semiconductor thin films | en_US |
| dc.subject | silicon | en_US |
| dc.subject | thermionic emission | en_US |
| dc.subject | thin film transistors | en_US |
| dc.title | Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel | en_US |
| dc.type | Article | en_US |